MgO-based double barrier magnetic tunnel junctions with thin free layers

MgO-based double barrier magnetic tunnel junctions with thin free layers

The free layer thickness tfree in double barrier magnetic tunnel junctions DMTJs based on crystalline MgO barriers and CoFeB ferromagnetic layers has been varied from 0.5 to 3.0 nm in order to investigate its effect on the magnetic and electrical properties. One obvious feature of DMTJs with tfree 1 nm is the absence of sharp free layer switching in the TMR curves, which can be explained by the...

Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions

Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 m...

Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer

Magnetic tunnel junctions with MgO-EuO composite tunnel barriers

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the mo...